data sheet semiconductor http://www.yeashin.com 1 rev.02 20120403 mun5211dw series 1 3 2 sc-88/sot-363 6 4 5 dual bias resistortransistors npn silicon surface mount transistors with monolithic bias resistor network 1 3 2 6 4 5 q 1 q 2 r 1 r 2 r 1 r 2 7x marking diagram 13 2 6 4 5 device marking information see specific marking information in the device marking table on page 2 of this data sheet. 7x = device marking = (see page 2) 256 (note 2.) 1.5 (note 1.) 2.0 (note 2.) maximum ratings (t a = 25c unless otherwise noted, common for q 1 and q 2 ) rating symbol value unit collector-base voltage v cbo 50 vdc collector-emitter voltage v ceo 50 vdc collector current i c 100 madc thermal characteristics characteristic (one junction heated) symbol max unit total device dissipation p d 187 (note 1.) mw t a = 25c derate above 25c mw/c thermal resistance ? r ja 670 (note 1.) c/w junction-to-ambient 490 (note 2.) characteristic (both junctions heated) symbol max unit total device dissipation t a = 25c derate above 25c p d 250 (note 1.) 385 (note 2.) 2.0 (note 1.) 3.0 (note 2.) mw mw/c thermal resistance ? junction-to-ambient r ja 493 (note 1.) 325 (note 2.) c/w thermal resistance ? junction-to-lead r jl 188 (note 1.) 208 (note 2.) c/w junction and storage temperature t j , t stg ?55 to +150 c 1. fr?4 @ minimum pad 2. fr?4 @ 1.0 x 1.0 inch pad the brt (bias resistor transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base?emitter resistor. these digital transistors are designed to replace a single device and its external resistor bias network. the brt eliminates these individual components by integrating them into a single device. in the lmun5211dw1t1 series, two brt devices are housed in the sot?363 package which is ideal for low power surface mount applications where board space is at a premium. simplifies circuit design reduces board space reduces component count pb-free package is available h
http://www.yeashin.com 2 rev.02 20120403 mun5211dw series device marking , resistor values and ordering information device package marking r1(k) r2(k) shipping mun5211dw sot-363 7a 10 10 3000/tape&reel MUN5212DW sot-363 7b 22 22 3000/tape&reel mun5213dw sot-363 7c 47 47 3000/tape&reel mun5214dw sot-363 7d 10 47 3000/tape&reel mun5215dw sot-363 7e 10 3000/tape&reel mun5216dw sot-363 7f 4.7 3000/tape&reel mun5230dw sot-363 7g 1 1 3000/tape&reel mun5231dw sot-363 7h 2.2 2.2 3000/tape&reel mun5232dw sot-363 7j 4.7 4.7 3000/tape&reel mun5234dw sot-363 7l 22 47 3000/tape&reel mun5235dw sot-363 7m 2.2 47 3000/tape&reel mun5236dw sot-363 7n 100 100 3000/tape&reel mun5237dw sot-363 7p 47 22 3000/tape&reel mun5233dw sot-363 7k 4.7 47 3000/tape&reel
http://www.yeashin.com 3 rev.02 20120403 mun5211dw series electrical characteristics electrical characteristics (t a = 25c unless otherwise noted, common for q 1 and q 2 ) characteristic symbol min typ max unit off characteristics collector-base cutoff current (v cb = 50 v, i e = 0) i cbo ? ? 100 nadc collector-emitter cutoff current (v ce = 50 v, i b = 0) i ceo ? ? 500 nadc emitter-base cutof f current mun5211dw (v eb = 6.0 v, i c = 0) MUN5212DW mun5213dw mun5214dw mun5215dw mun5216dw mun5230dw mun5231dw mun5232dw mun5233dw mun5234dw mun5235dw mun5236dw mun5237dw i ebo ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 madc collector-base breakdown voltage (i c = 10 a, i e = 0) v (br)cbo 50 ? ? vdc collector-emitter breakdown voltage(note 4.)(i c = 2.0 ma,i b =0) v (br)ceo 50 ? ? vdc 4. pulse test: pulse width < 300 s, duty cycle < 2.0%
http://www.yeashin.com 4 rev.02 20120403 mun5211dw series electrical characteristics electrical characteristics (t a = 25c unless otherwise noted, common for q 1 and q 2 ,) (continued) characteristic symbol min typ max unit on characteristics (note 5.) dc current gain mun5211dw (v ce = 10 v, i c = 5.0 ma) MUN5212DW mun5213dw mun5214dw mun5215dw mun5216dw mun5230dw mun5231dw mun5232dw mun5233dw mun5234dw mun5235dw mun5236dw mun5237dw h fe ? ? ? ? ? ? ? ? ? ? ? ? ? ? 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 60 100 140 140 350 350 5.0 15 30 200 150 140 150 140 output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k ? ) mun5211dw MUN5212DW mun5214dw mun5215dw mun5216dw mun5230dw mun5231dw mun5232dw mun5233dw mun5234dw mun5235dw mun5213dw mun5236dw mun5237dw v ol ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 vdc (v cc = 5.0 v, v b = 3.5 v, r l = 1.0 k ? ) (v cc = 5.0 v, v b = 5.5 v, r l = 1.0 k ? ) (v cc = 5.0 v, v b = 4.0 v, r l = 1.0 k ? ) output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k ? ) (v cc = 5.0 v, v b = 0.05 v, r l = 1.0 k ? ) mun5230dw (v cc = 5.0 v, v b = 0.25 v, r l = 1.0 k ? ) mun5215dw mun5216dw mun5233dw collector-emitter saturation voltage (i c = 10ma,i b = 0.3 ma) v ce(sat) ? ? 0.25 vdc (i c = 10ma, i b = 5ma) mun5230dw/mun5231dw (i c = 10ma, i b = 1ma) mun5215dw/mun5216dw mun5232d/mun5233dw/mun5234dw v oh 4.9 ? ? vdc 5. pulse test: pulse width < 300 ms, duty cycle < 2.0%
http://www.yeashin.com 5 rev.02 20120403 mun5211dw series electrical characteristics input resistor mun5211dw MUN5212DW mun5213dw mun5214dw mun5215dw mun5216dw mun5230dw mun5231dw mun5232dw mun5233dw mun5234dw mun5235dw mun5236dw mun5237dw electrical characteristics (t a = 25c unless otherwise noted, common for q 1 and q 2 ,) (continued) characteristic symbol min typ max unit on characteristics (note 6.) r 1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 k ? resistor ratio mun5211dw/MUN5212DW mun5213dw/mun5236dw mun5214dw/mun5215dw mun5216dw/mun5230dw mun5231dw/mun5232dw mun5233dw mun5234dw mun5235dw mun5237dw r 1 /r 2 0.8 0.17 ? 0.8 0.055 0.38 0.038 1.7 1.0 0.21 ? 1.0 0.1 0.47 0.047 2.1 1.2 0.25 ? 1.2 0.185 0.56 0.056 2.6 6. pulse test: pulse width < 300 ms, duty cycle < 2.0% p d , power dissipation (mw) 300 250 200 150 100 50 0 t a , ambient temperature (c) figure 1. derating curve ?50 0 50 100 150 833c
http://www.yeashin.com 6 rev.02 20120403 mun5211dw series i c , collector current (ma) figure 2. v ce(sat) versus i c v r , reverse bias voltage (volts) figure 4. output capacitance i c , collector current (ma) figure 6. input voltage versus output current i c , collector current (ma) figure 3. dc current gain v in , input voltage (volts) i c , collector current (ma) v ce(sat) , maximum collector voltage (volts) v in , input voltage (volts) figure 5. output current versus input voltage 1 0.1 0.01 0.001 020 4050 h fe , dc current gain (normalized) 1000 100 10 1 10 100 4 3 2 1 0 01020304050 c ob capacitance (pf) 100 10 1 0.1 0.01 0.001 012345678910 10 1 0.1 01020304050 typical electrical characteristics ?mun5211dw device characteristics
http://www.yeashin.com 7 rev.02 20120403 mun5211dw series device characteristics typical electrical characteristics ? MUN5212DW i c , collector current (ma) figure 7. v ce(sat) versus i c v r , reverse bias voltage (volts) figure 9. output capacitance i c ,collector current (ma) figure 11. input voltage versus output current i c , collector current (ma) figure 8. dc current gain v in , input voltage (volts) i c , collector current (ma) v ce(sat) , maximum collector voltage (volts) v in , input voltage (volts) figure 10. output current versus input oltage 10 1 0.1 0.01 020 4050 h fe , dc current gain (normalized) 1000 100 10 1 10 100 4 3 2 1 0 01020304050 c ob capacitance (pf) 100 10 1 0.1 0.01 0.001 012345678910 100 10 1 0.1 01020304050
http://www.yeashin.com 8 rev.02 20120403 mun5211dw series device characteristics typical electrical characteristics ? mun5213dw i c , collector current (ma) figure 12. v ce(sat) versus i c v r , reverse bias voltage (volts) figure 14. output capacitance i c , collector current (ma) figure 16. input voltage versus output current i c , collector current (ma) figure 13. dc current gain v in , input voltage (volts) i c , collector current (ma) v ce(sat) , maximum collector voltage (volts) v in , input voltage (volts) figure 15. output current versus input oltage 10 1 0.1 0.01 020 4050 h fe , dc current gain (normalized) 1000 100 10 1 10 100 1 0.8 0.6 0.4 0.2 0 01020304050 c ob capacitance (pf) 100 10 1 0.1 0.01 0.001 012345678910 100 10 1 0.1 01020304050
http://www.yeashin.com 9 rev.02 20120403 mun5211dw series device characteristics typical electrical characteristics ? mun5214dw i c , collector current (ma) figure 17. v ce(sat) versus i c v r , reverse bias voltage (volts) figure 19. output capacitance i c ,collector current (ma) figure 21. input voltage versus output current i c , collector current (ma) figure 18. dc current gain v in , input voltage (volts) i c , collector current (ma) v ce(sat) , maximum collector voltage (volts) v in , input voltage (volts) figure 20. output current versus input oltage 1 0.1 0.01 0.001 020406080 h fe , dc current gain (normalized) 300 250 200 150 100 50 0 1 2 3 4 5101520405060708090100 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 1015202530 3540 4550 c ob capacitance (pf) 100 10 1 012345678910 10 1 0.1 01020304050
http://www.yeashin.com 10 rev.02 20120403 mun5211dw series package outline & dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. inches millimeters dim min max min max a 0.071 0.087 1.80 2.20 b 0.045 0.053 1.15 1.35 c 0.031 0.043 0.80 1.10 d 0.004 0.012 0.10 0.30 g 0.026 bsc 0.65 bsc h --- 0.004 --- 0.10 j 0.004 0.010 0.10 0.25 k 0.004 0.012 0.10 0.30 n 0.008 ref 0.20 ref s 0.079 0.087 2.00 2.20 pin 1. emitter 2 2. base 2 3. collector 1 4.emitter 1 5. base 1 6.collector 2 b 0.2 (0.008) a g s h c n j k d 6pl 6 5 4 1 2 3 - b - m m 0.5 mm (min) 0.4 mm (min) 0.65 mm 0.65 mm 1.9 mm sc - 88/sot - 363
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